Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 639-642

  Chen, Y Y ^a   Liu, I M ^a   Gardner, M ^a   Fulford, J ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN IMPLANTED SILICON SUBSTRATES; VOLTAGE SHIFT;

GATES (TRANSISTOR); HOT CARRIERS; ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; NITROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; TRANSCONDUCTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 84886448008     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)