Work function controlled metal gate electrode on ultrathin gate insulators

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 95-96

  Nakajima, K ^a   Akasaka, Y ^a   Kaneko, M ^a   Tamaoki, M ^a   Yamada, Y ^a   Shimizu, T ^a   Ozawa, Y ^a   Suguro, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DEFECTS; ELECTRIC INSULATORS; ELECTRODES; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; SPUTTERING; TITANIUM NITRIDE; ULTRATHIN FILMS;

FLAT BAND VOLTAGE; METAL GATE ELECTRODE; METAL PENETRATION; ULTRATHIN GATE INSULATORS;

MOS DEVICES;

EID: 0033280525     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)