High performance metal gate MOSFETs fabricated by CMP for 0.1 μm regime

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 785-788

  Yagishita, Atsushi ^a   Saito, Tomohiro ^a   Nakajima, Kazuaki ^a   Inumiya, Seiji ^a   Akasaka, Yasushi ^a   Ozawa, Yoshio ^a   Minamihaba, Gaku ^a   Yano, Hiroyuki ^a   Hieda, Katsuhiko ^a   Suguro, Kyoichi ^a   Arikado, Tsunetoshi ^a   Okumura, Katsuya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICAL MECHANICAL POLISHING (CMP); DAMASCENE GATE PROCESS;

MOSFET DEVICES;

EID: 0032255099     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)