3-9-GHz GaN-Based Microwave Power Amplifiers with L-C-R Broad-Band Matching

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 8, 1999, Pages 314-316

  Wu, Y F ^a   York, R A ^b   Keller, S ^b   Keller, B P ^a   Mishra, U K ^a  

^a WiTech   (United States)

^b University of California   (United States)

Author keywords

Amplifier; field effect transistors; gallium nitride (GaN); microwave power

Indexed keywords

ELECTRIC TRANSFORMERS; FLIP CHIP DEVICES; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS; NITRIDES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSDUCERS;

GALLIUM NITRIDE;

MICROWAVE AMPLIFIERS;

EID: 0033170314     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.779913     Document Type: Article

References (6)

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