1-8-GHz GaN-Based Power Amplifier Using Flip-Chip Bonding

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 7, 1999, Pages 277-279

  Xu, Jane J ^a   Wu, Yi Feng ^b   Keller, Stacia ^a   Parish, Gia ^a   Heikman, Sten ^a   Thibeault, Brian J ^b   Mishra, Umesh K ^a   York, Robert A ^a  

^a University of California   (United States)

^b Widegap Technology   (United States)

Author keywords

Flip chip; GaN; power amplifier

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FLIP CHIP DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL CONDUCTIVITY;

FLIP CHIP BONDING; GALLIUM NITRIDE BASED POWER AMPLIFIER; TRAVELING WAVE POWER AMPLIFIER;

POWER AMPLIFIERS;

EID: 0032683491     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.774146     Document Type: Article

References (8)

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