High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Applied Physics Letters

Volumn 73, Issue 21, 1998, Pages 3147-3149

  Chen, Ching Hui ^a   Keller, Stacia ^a   Parish, Gia ^a   Vetury, Ramakrishna ^a   Kozodoy, Peter ^a   Hu, Evelyn L ^a   Denbaars, Steven P ^a   Mishra, Umesh K ^a   Wu, Yifeng ^b  

^a University of California   (United States)

^b WiTech   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; GAIN MEASUREMENT; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

BREAKDOWN VOLTAGES; MODULATION DOPED FIELD EFFECT TRANSISTORS; TRANSFER CONTACT RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0032561602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122701     Document Type: Article

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