Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 78-82

  Matsushima, Hidetada ^a   Yamaguchi, Masahito ^a   Hiramatsu, Kazumasa ^b   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

Buried structuer; GaN; MOVPE; Selective area growth (SAG); Sub micron dot

Indexed keywords

CRYSTAL ORIENTATION; HOLOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; SEMICONDUCTOR GROWTH;

EPITAXIAL LATERAL GROWTH (ELO); SELECTIVE AREA GROWTH (SAG);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092348     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00175-4     Document Type: Article

References (7)

1. Ok-Hyun Nam, M.D. Bremser, B.L. Ward, R.J. Nemanich, R.F. Davis, Jpn. J. Appl. Phys. 36 (1997) L532.
2. R.D. Underwood, D. Kapolnek, B.P. Keller, S. Keller, S.P. Denbaars, U.K. Mishra, Solid State Electron. 41 (1997) 243.
3. Y. Kato, S. Kitamura, K. Hiramatsu, N. Sawaki, J. Crystal Growth 144 (1994) 133.
4. X. Li, A.M. Jones, S.D. Roh, D.A. Turnbull, E.E. Reuter, S.Q. Gu, S.G. Bishop, J.J. Coleman, Mater. Rec. Soc. Symp. Proc. 395 (1996) 943.
5. T. Tanaka, K. Uchida, A. Watanabe, S. Minagawa, Appl. Phys. Lett. 68 (1996) 976.
6. S. Kitamura, K. Hiramatsu, N. Sawaki, Jpn. J. Appl. Phys. 34 (1995) L1184.
7. D. Kapolnek, R.D. Underwood, B.P. Keller, S. Keller, S.P. Denbaars, U.K. Mishra, J. Crystal Growth 170 (1997) 340.