Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 943-948

  Li, X ^a   Jones, A M ^a   Roh, S D ^a   Turnbull, D A ^a   Reuter, E E ^a   Gu, S Q ^a   Bishop, S G ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; FILM GROWTH; IMAGING TECHNIQUES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SPECTROSCOPIC ANALYSIS; SURFACES;

CATHODOLUMINESCENCE SPECTROSCOPY; CATHOLUMINESCENCE WAVELENGTH IMAGING METHOD; GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; SELECTIVE AREA EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029765309     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)