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Volumn 189-190, Issue , 1998, Pages 87-91

Selective area growth of GaN/AlN heterostructures

(7) Marx, Diethard a Kawazu, Zempei a Nakayama, Takeshi a Mihashi, Yutaka a Takami, Tetsuya a Nunoshita, Masahiro a Ozeki, Tatsuo a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

AlN; GaN; MOCVD; MOVPE; SAG; Selective growth

Indexed keywords

HETEROJUNCTIONS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA;

SELECTIVE AREA GROWTH (SAG);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0042181198 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00178-X Document Type: Article

Times cited : (18)

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