Growth kinetics and morphology of high quality AIN grown on Si(111) by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 82, Issue 9, 1997, Pages 4681-4683

  Calleja, E ^a   Senchez Garcia M A ^a   Monroy, E ^a   Sanchez F J ^a   Munoz E ^a   Sanz Hervas A ^a   Villar, C ^a,b   Aguilar, M ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH KINETICS; KINETIC THEORY; MORPHOLOGY; STOICHIOMETRY; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; X RAY DIFFRACTION;

FULL WIDTH AT HALF MAXIMUM; GROWTH TEMPERATURE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0031274638     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366208     Document Type: Article

References (8)

1. K. S. Stevens, A. Othani, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. 65, 321 (1995); and references therein.
2. Y. Ohba and A. Hatano, Jpn. J. Appl. Phys. 35, L1013 (1996).
3. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, J. Appl. Phys. 79, 2439 (1996).
4. M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sánchez, F. Calle, E. Muñoz, and R. Beresford, J. Crystal Growth (to be published).
5. M. A. Sánchez-García, E. Calleja, F. Calle, F. J. Sánchez, E. Monroy, J. M. G. Tijero, R. Beresford, A. Sanz-Hervás, C. Villar, J. J. Serrano and J. M. Blanco (unpublished).
6. S. Tanaka, R. Scott Kern, and R. F. Davis, Appl. Phys. Lett. 66, 37 (1995).
7. B. N. Sverdlov, G. A. Martin, H. Morkoç, and D. J. Smith, Appl. Phys. Lett. 67, 2063 (1995). See also: L. T, Romano, J. E. Northrup, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996).
8. B. N. Sverdlov, G. A. Martin, H. Morkoç, and D. J. Smith, Appl. Phys. Lett. 67, 2063 (1995). See also: L. T, Romano, J. E. Northrup, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996).