Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1127-1130

  Niebuhr, R ^a,b   Bachem, K H ^a   Kaufmann, U ^a   Maier, M ^a   Merz, C ^a   Santic, B ^a,c   Schlotter, P ^a   Jurgensen H ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b AIXTRON AG   (Germany)

^c RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

Doping; GaN; Hall; Metalorganic chemical vapor deposition (MOCVD); Nitrogen vacancy; Oxygen; Photoluminescence (PL)

Indexed keywords

CARRIER CONCENTRATION; EXCITONS; FILM GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN OXIDES; OXYGEN; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031256947     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0007-x     Document Type: Article

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