Low-temperature luminescence study of GaN films grown by MBE

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 366-371

  Andrianov, A V ^a,b   Lacklison, D E ^a   Orton, J W ^a   Dewsnip, D J ^a   Hooper, S E ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; LOW TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHONONS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

CHLORIDE VAPOR TRANSPORT TECHNIQUE; HIGH TEMPERATURE ELECTRONIC DEVICES; LOW TEMPERATURE LUMINESCENCE; PHOTOLUMINESCENCE MEASUREMENT; SHARP PEAK; STRAIN EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030106629     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/015     Document Type: Article

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