-
1
-
-
0012038640
-
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, and T. Yamada, "Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates," Appl. Phys. Lett., vol. 72, pp. 2014-2016, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 2014-2016
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
-
2
-
-
0032067047
-
Wurzite GaN-based heterostructures by molecular beam epitaxy
-
H. Morkoç, "Wurzite GaN-based heterostructures by molecular beam epitaxy," IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 537-549, 1998.
-
(1998)
IEEE J. Select. Topics Quantum Electron.
, vol.4
, pp. 537-549
-
-
Morkoç, H.1
-
3
-
-
0028304539
-
Quantum cascade laser
-
J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, "Quantum cascade laser," Science, vol. 263, pp. 553-555, 1994.
-
(1994)
Science
, vol.263
, pp. 553-555
-
-
Faist, J.1
Capasso, F.2
Sivco, D.L.3
Sirtori, C.4
Hutchinson, A.L.5
Cho, A.Y.6
-
4
-
-
0027687152
-
Quantum-well infrared photodetectors
-
B. F. Levine, "Quantum-well infrared photodetectors," J. Appl. Phys., vol. 74, pp. R1-R81, 1993.
-
(1993)
J. Appl. Phys.
, vol.74
-
-
Levine, B.F.1
-
5
-
-
0003806761
-
-
New York: Wiley
-
R. Eisberg and R. Resnick, Quantum Physics of Atoms, Molecules, Solids, Nuclei, and Particles. New York: Wiley, 1974, pp. 14-24.
-
(1974)
Quantum Physics of Atoms, Molecules, Solids, Nuclei, and Particles
, pp. 14-24
-
-
Eisberg, R.1
Resnick, R.2
-
6
-
-
0028745317
-
MBE HgCdTe IRFPA flexible manufacturing
-
M. Arias, M. Zandian, J. G. Pasko, J. Bajaj, L. J. Kozlowski, W. E. Tennant, and R. E. DeWames, "MBE HgCdTe IRFPA flexible manufacturing," in Proc. SPIE, vol. 2274, 1994, pp. 2-16.
-
(1994)
Proc. SPIE
, vol.2274
, pp. 2-16
-
-
Arias, M.1
Zandian, M.2
Pasko, J.G.3
Bajaj, J.4
Kozlowski, L.J.5
Tennant, W.E.6
DeWames, R.E.7
-
7
-
-
0037964479
-
High performance LWIR 256 × 256 HgCdTe focal plane array operating at 88 K
-
G. Destefanis, P. Audebert, E. Mottin, and P. Rambaud, "High performance LWIR 256 × 256 HgCdTe focal plane array operating at 88 K," in Proc. SPIE, vol. 3061, 1997, pp. 111-116.
-
(1997)
Proc. SPIE
, vol.3061
, pp. 111-116
-
-
Destefanis, G.1
Audebert, P.2
Mottin, E.3
Rambaud, P.4
-
8
-
-
11544276783
-
Progress in HgCdTe homojunction infrared detectors
-
P. Tribolet, J. P. Chatard, P. Costa, and A. Manissadjian, "Progress in HgCdTe homojunction infrared detectors," J. Cryst. Growth, vol. 184-185, pp. 1262-1271, 1998.
-
(1998)
J. Cryst. Growth
, vol.184-185
, pp. 1262-1271
-
-
Tribolet, P.1
Chatard, J.P.2
Costa, P.3
Manissadjian, A.4
-
9
-
-
0342730761
-
Extrinsic IR photoconductivity of Si doped with B, Al, Ga, P, As, or Sb
-
R. A. Soref, "Extrinsic IR photoconductivity of Si doped with B, Al, Ga, P, As, or Sb," J. Appl. Phys., vol. 38, pp. 5201-5208, 1967.
-
(1967)
J. Appl. Phys.
, vol.38
, pp. 5201-5208
-
-
Soref, R.A.1
-
10
-
-
21544434396
-
First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well
-
L. West and S. Eglash, "First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well," Appl. Phys. Lett., vol. 46, pp. 1156-1158, 1985.
-
(1985)
Appl. Phys. Lett.
, vol.46
, pp. 1156-1158
-
-
West, L.1
Eglash, S.2
-
11
-
-
36549103775
-
New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
-
B. Levine, K. Choi, C. Bethea, J. Walker, and R. Malik, "New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices," Appl. Phys. Lett., vol. 50, pp. 1092-1094, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, pp. 1092-1094
-
-
Levine, B.1
Choi, K.2
Bethea, C.3
Walker, J.4
Malik, R.5
-
12
-
-
79957658355
-
Recent developments in quantum-well infrared photodetectors
-
M. H. Francombe and J. L. Vossen, Eds. San Diego, CA: Academic
-
S. D. Gunapala and K. M. S. V. Bandara, "Recent developments in quantum-well infrared photodetectors," in Homojunction and Quantum-Well Infrared Detectors, M. H. Francombe and J. L. Vossen, Eds. San Diego, CA: Academic, 1995, vol. 21, pp. 113-237.
-
(1995)
Homojunction and Quantum-Well Infrared Detectors
, vol.21
, pp. 113-237
-
-
Gunapala, S.D.1
Bandara, K.M.S.V.2
-
13
-
-
0031258158
-
Recent progress in quantum well infrared photodetectors and focal plane arrays for IR imaging applications
-
S. Li, "Recent progress in quantum well infrared photodetectors and focal plane arrays for IR imaging applications," Mater. Chem. Phys., vol. 50, pp. 188-194, 1997.
-
(1997)
Mater. Chem. Phys.
, vol.50
, pp. 188-194
-
-
Li, S.1
-
14
-
-
0004908915
-
Technology of multiple quantum well infrared detectors
-
P. Bois, E. Costard, J. Y. Duboz, and J. Nagle, "Technology of multiple quantum well infrared detectors," in Proc. SPIE, vol. 3061, 1997, pp. 764-771.
-
(1997)
Proc. SPIE
, vol.3061
, pp. 764-771
-
-
Bois, P.1
Costard, E.2
Duboz, J.Y.3
Nagle, J.4
-
15
-
-
0031206786
-
Comparison of the performance of quantum well and conventional bulk infrared photodectors
-
A. Rogalski, "Comparison of the performance of quantum well and conventional bulk infrared photodectors," Infrared Phys. Technol., vol. 38, pp. 295-310, 1997.
-
(1997)
Infrared Phys. Technol.
, vol.38
, pp. 295-310
-
-
Rogalski, A.1
-
16
-
-
33646284358
-
1 - xAs quantum well infrared photodetector focal plane array camera
-
1 - xAs quantum well infrared photodetector focal plane array camera," in Proc. SPIE, vol. 3061, 1997, pp. 722-727.
-
(1997)
Proc. SPIE
, vol.3061
, pp. 722-727
-
-
Gunapala, S.D.1
Bandara, S.V.2
Liu, J.K.3
Hong, W.4
Sundaram, M.5
Carralejo, R.6
Shott, C.A.7
Maker, P.D.8
Miller, R.E.9
-
17
-
-
0028443292
-
High performance InGaAs/GaAs quantum well infrared photo detectors
-
S. D. Gunapala, K. M. S. V. Bandara, B. F. Levine, G. Sarusi, J. S. Park, T. L. Pike, and J. K. Liu, "High performance InGaAs/GaAs quantum well infrared photo detectors," Appl. Phys. Lett., vol. 64, pp. 3431-3433, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 3431-3433
-
-
Gunapala, S.D.1
Bandara, K.M.S.V.2
Levine, B.F.3
Sarusi, G.4
Park, J.S.5
Pike, T.L.6
Liu, J.K.7
-
18
-
-
0000091413
-
GaAs/AlGaAs multiquanturn well infrared detector arrays using etched gratings
-
G. Hasnain, B. F. Levine, C. G. Bethea, R. A. Logan, J. Walker, and R. J. Malik, "GaAs/AlGaAs multiquanturn well infrared detector arrays using etched gratings," Appl. Phys. Lett., vol. 54, pp. 2515-2517, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 2515-2517
-
-
Hasnain, G.1
Levine, B.F.2
Bethea, C.G.3
Logan, R.A.4
Walker, J.5
Malik, R.J.6
-
19
-
-
0001249331
-
Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors
-
G. Sarusi, B. F. Levine, S. J. Pearton, K. M. S. V. Bandara, and R. E. Leibenguth, "Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors," J. Appl. Phys., vol. 76, pp. 4989-4994, 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 4989-4994
-
-
Sarusi, G.1
Levine, B.F.2
Pearton, S.J.3
Bandara, K.M.S.V.4
Leibenguth, R.E.5
-
20
-
-
0028371837
-
Improved performance of quantum well infrared photodetectors using random scattering optical coupling
-
_, "Improved performance of quantum well infrared photodetectors using random scattering optical coupling," Appl. Phys. Lett., vol. 64, pp. 960-962, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 960-962
-
-
-
21
-
-
0032121608
-
Corrugated quantum well infrared photodetectors with polyimide planarization for detector array applications
-
C. J. Chen, K. K. Choi, W. H. Chang, and D. C. Tsui, "Corrugated quantum well infrared photodetectors with polyimide planarization for detector array applications," IEEE Trans. Electron Devices, vol. 45, pp. 1431-1437, 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 1431-1437
-
-
Chen, C.J.1
Choi, K.K.2
Chang, W.H.3
Tsui, D.C.4
-
23
-
-
21544475375
-
Multidimensional quantum well laser and temperature dependence of its threshold current
-
Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 939-941
-
-
Arakawa, Y.1
Sakaki, H.2
-
24
-
-
21544477864
-
Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
-
L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. LeRoux, "Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices," Appl. Phys. Lett., vol. 47, pp. 1099-1101, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.47
, pp. 1099-1101
-
-
Goldstein, L.1
Glas, F.2
Marzin, J.Y.3
Charasse, M.N.4
LeRoux, G.5
-
25
-
-
33746405789
-
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxial growth of highly strained InGaAs on GaAs (100)
-
S. Guha, A. Madhukar, and K. C. Rajkumar, "Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxial growth of highly strained InGaAs on GaAs (100)," Appl. Phys. Lett., vol. 57, pp. 2110-2112, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 2110-2112
-
-
Guha, S.1
Madhukar, A.2
Rajkumar, K.C.3
-
26
-
-
36549102183
-
Relaxation of strained InGaAs during molecular beam epitaxy
-
G. J. Whaley and P. I. Cohen, "Relaxation of strained InGaAs during molecular beam epitaxy," Appl. Phys. Lett., vol. 57, pp. 144-146, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 144-146
-
-
Whaley, G.J.1
Cohen, P.I.2
-
27
-
-
0005985335
-
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surface
-
D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surface," Appl. Phys. Lett., vol. 63, pp. 3203-3205, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 3203-3205
-
-
Leonard, D.1
Krishnamurthy, M.2
Reaves, C.M.3
Denbaars, S.P.4
Petroff, P.M.5
-
28
-
-
0001238658
-
Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
-
F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, and P. Werner, "Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 68, pp. 3284-3286, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 3284-3286
-
-
Heinrichsdorff, F.1
Krost, A.2
Grundmann, M.3
Bimberg, D.4
Kosogov, A.5
Werner, P.6
-
29
-
-
21944454760
-
1.3 μm room-temperature GaAs-based quantum-dot laser
-
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2564-2566
-
-
Huffaker, D.L.1
Park, G.2
Zou, Z.3
Shchekin, O.B.4
Deppe, D.G.5
-
30
-
-
0031997179
-
Growth, spectroscopy and laser application of self-ordered III-V quantum dots
-
D. Bimberg, M. Grundmann, and N. N. Ledentsov, "Growth, spectroscopy and laser application of self-ordered III-V quantum dots," Mater. Res. Soc. Bull., vol. 23, pp. 31-34, 1998.
-
(1998)
Mater. Res. Soc. Bull.
, vol.23
, pp. 31-34
-
-
Bimberg, D.1
Grundmann, M.2
Ledentsov, N.N.3
-
31
-
-
0030288960
-
Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser
-
H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, "Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser," Appl. Phys. Lett., vol. 69, pp. 3140-3142, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 3140-3142
-
-
Saito, H.1
Nishi, K.2
Ogura, I.3
Sugou, S.4
Sugimoto, Y.5
-
32
-
-
0342779775
-
High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
-
F. Schäfer, J. P. Reithmaier, and A. Forchel, "High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer," Appl. Phys. Lett., vol. 74, pp. 2915-2917, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2915-2917
-
-
Schäfer, F.1
Reithmaier, J.P.2
Forchel, A.3
-
33
-
-
0032487211
-
Normal-incidence intersubband (In. Ga)As/GaAs quantum dot infrared photodetectors
-
D. Pan, E. Towe, and S. Kennerly, "Normal-incidence intersubband (In. Ga)As/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 73, pp. 1937-1939, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1937-1939
-
-
Pan, D.1
Towe, E.2
Kennerly, S.3
-
34
-
-
0032162655
-
Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors
-
D. Pan and E. Towe, "Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors," Electron. Lett., vol. 34, pp. 1883-1884, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 1883-1884
-
-
Pan, D.1
Towe, E.2
-
35
-
-
0000477403
-
A five-period normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
-
D. Pan, E. Towe, and S. Kennedy, "A five-period normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 75, pp. 2719-2721, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 2719-2721
-
-
Pan, D.1
Towe, E.2
Kennedy, S.3
-
36
-
-
0001163227
-
Far-infrared photoconductivity in self-organized InAs quantum dots
-
J. Phillips, K. Kamath, and P. Bhattacharya, "Far-infrared photoconductivity in self-organized InAs quantum dots," Appl. Phys. Lett., vol. 72, pp. 2020-2022, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 2020-2022
-
-
Phillips, J.1
Kamath, K.2
Bhattacharya, P.3
-
37
-
-
21544478481
-
Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photo conductive detector
-
S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photo conductive detector," Appl. Phys. Lett., vol. 73, pp. 963-965, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 963-965
-
-
Kim, S.1
Mohseni, H.2
Erdtmann, M.3
Michel, E.4
Jelen, C.5
Razeghi, M.6
-
38
-
-
22244489704
-
Characteristics of InGaAs quantum dot infrared photodetectors
-
S. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, S. Wang, and X. G. Xie, "Characteristics of InGaAs quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 73, pp. 3153-3155, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3153-3155
-
-
Xu, S.1
Chua, S.J.2
Mei, T.3
Wang, X.C.4
Zhang, X.H.5
Karunasiri, G.6
Fan, W.J.7
Wang, C.H.8
Jiang, J.9
Wang, S.10
Xie, X.G.11
-
39
-
-
0032620077
-
Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
-
S.-W. Lee, K. Hirakawa, and Y. Shimada, "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures," Appl. Phys. Lett., vol. 75, pp. 1428-1430, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1428-1430
-
-
Lee, S.-W.1
Hirakawa, K.2
Shimada, Y.3
-
40
-
-
0000964860
-
Zur theorie der orientierten ausscheidung von lonenkristallen aufeinander
-
I. N. Stranski and L. Krastanow, "Zur theorie der orientierten ausscheidung von lonenkristallen aufeinander," Sitzungsberichte d. Akad. d. Wissenschaften in Wein, Abt. IIb, vol. 146, pp. 797-810, 1937.
-
(1937)
Sitzungsberichte d. Akad. d. Wissenschaften in Wein, Abt. IIb
, vol.146
, pp. 797-810
-
-
Stranski, I.N.1
Krastanow, L.2
-
41
-
-
21544465321
-
InAs self-assembled quantum dots on InP by molecular beam epitaxy
-
S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond, and S. Charbonneau, "InAs self-assembled quantum dots on InP by molecular beam epitaxy," Appl. Phys. Lett., vol. 68, pp. 991-993, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 991-993
-
-
Fafard, S.1
Wasilewski, Z.2
McCaffrey, J.3
Raymond, S.4
Charbonneau, S.5
-
42
-
-
0001164627
-
Effect of matrix on InAs self-organized quantum dots on InP substrate
-
V. M. Ustinov, E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, and P. S. Kop'ev, "Effect of matrix on InAs self-organized quantum dots on InP substrate," Appl. Phys. Lett., vol. 72, pp. 362-364, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 362-364
-
-
Ustinov, V.M.1
Weber, E.R.2
Ruvimov, S.3
Liliental-Weber, Z.4
Zhukov, A.E.5
Egorov, A.Yu.6
Kovsh, A.R.7
Tsatsul'nikov, A.F.8
Kop'ev, P.S.9
-
43
-
-
0032620448
-
Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study
-
E. Alphandéry, R. J. Nicholas, N. J. Mason, B. Zhang, P. Möck, and G. R. Booker, "Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study," Appl. Phys. Lett., vol. 74, pp. 2041-2043, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2041-2043
-
-
Alphandéry, E.1
Nicholas, R.J.2
Mason, N.J.3
Zhang, B.4
Möck, P.5
Booker, G.R.6
-
44
-
-
0000139837
-
0.6As quantum-dot lasers grown on Si substrates
-
0.6As quantum-dot lasers grown on Si substrates," Appl. Phys. Lett., vol. 74, pp. 1355-1357, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1355-1357
-
-
Linder, K.K.1
Phillips, J.2
Qasaimeh, O.3
Liu, X.F.4
Krishna, S.5
Bhattacharya, P.6
-
45
-
-
3643130905
-
Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
-
D. J. Eaglesham and M. Cerullo, "Dislocation-free Stranski-Krastanow growth of Ge on Si(100)," Phys. Rev. Lett., vol. 64, pp. 1943-1946, 1990.
-
(1990)
Phys. Rev. Lett.
, vol.64
, pp. 1943-1946
-
-
Eaglesham, D.J.1
Cerullo, M.2
-
46
-
-
0007041546
-
InAs self-organized quantum dashes grown on GaAs (211)B
-
S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "InAs self-organized quantum dashes grown on GaAs (211)B," Appl. Phys. Lett., vol. 70, pp. 2738-2740, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 2738-2740
-
-
Guo, S.P.1
Ohno, H.2
Shen, A.3
Matsukura, F.4
Ohno, Y.5
-
47
-
-
0032493974
-
Optical properties and device applications of (InGa)As self-assembles quantum dots grown on (311)B GaAs substrates
-
A. Polimeni, M. Henini, A. Patane, L. Eaves, and P. C. Main, "Optical properties and device applications of (InGa)As self-assembles quantum dots grown on (311)B GaAs substrates," Appl. Phys. Lett., vol. 73, pp. 1415-1417, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.73
, pp. 1415-1417
-
-
Polimeni, A.1
Henini, M.2
Patane, A.3
Eaves, L.4
Main, P.C.5
-
48
-
-
0342407964
-
Highly packed InGaAs quantum dots on GaAs(311)B
-
K. Akahane, T. Kawamura, K. Okino, H. Koyama, S. Lan, Y. Okada, and M. Kawabe, "Highly packed InGaAs quantum dots on GaAs(311)B," Appl. Phys. Lett., vol. 73, pp. 3411-3413, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3411-3413
-
-
Akahane, K.1
Kawamura, T.2
Okino, K.3
Koyama, H.4
Lan, S.5
Okada, Y.6
Kawabe, M.7
-
49
-
-
0000630074
-
Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
-
A. Konkar, A. Madhukar, and P. Chen, "Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates," Appl. Phys. Lett., vol. 72, pp. 220-222, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 220-222
-
-
Konkar, A.1
Madhukar, A.2
Chen, P.3
-
50
-
-
0343701724
-
Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates
-
R. Zhang, R. Tsui, K. Shiralagi, D. Convey, and H. Goronkin, "Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates," Appl. Phys. Lett., vol. 73, pp. 505-507, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 505-507
-
-
Zhang, R.1
Tsui, R.2
Shiralagi, K.3
Convey, D.4
Goronkin, H.5
-
51
-
-
85024793803
-
Relaxed template for fabricating regularly distributed quantum dot arrays
-
Y. H. Xie, S. B. Samavedam, M. Bulsara, T. A. Langdo, and E. A. Fitzgerald, "Relaxed template for fabricating regularly distributed quantum dot arrays," Appl. Phys. Lett, vol. 71, pp. 3567-3568, 1997.
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 3567-3568
-
-
Xie, Y.H.1
Samavedam, S.B.2
Bulsara, M.3
Langdo, T.A.4
Fitzgerald, E.A.5
-
52
-
-
0001177348
-
Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films
-
D. Pan, J. Xu, and E. Towe, "Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films," Appl. Phys. Lett., vol. 73, pp. 2164-2166, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2164-2166
-
-
Pan, D.1
Xu, J.2
Towe, E.3
-
53
-
-
36449005775
-
Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs
-
G. Soloman, J. A. Trezza, and J. S. Harris Jr., "Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs," Appl. Phys. Lett., vol. 66, pp. 3161-3163, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 3161-3163
-
-
Soloman, G.1
Trezza, J.A.2
Harris J.S., Jr.3
-
54
-
-
4244115357
-
Ultranarrow luminescence lines from single quantum dots
-
M. Grundmann, J. Christen, N. N. Ledentsov, J. Bohrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gosele, J. Heydenreich, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, P. S. Kop'ev, and Z. I. Alferov, "Ultranarrow luminescence lines from single quantum dots," Phys. Rev. Lett., vol. 74, pp. 4043-4046, 1995.
-
(1995)
Phys. Rev. Lett.
, vol.74
, pp. 4043-4046
-
-
Grundmann, M.1
Christen, J.2
Ledentsov, N.N.3
Bohrer, J.4
Bimberg, D.5
Ruvimov, S.S.6
Werner, P.7
Richter, U.8
Gosele, U.9
Heydenreich, J.10
Ustinov, V.M.11
Egorov, A.Y.12
Zhukov, A.E.13
Kop'ev, P.S.14
Alferov, Z.I.15
-
55
-
-
16444386423
-
Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
-
H. Lee, R. Lowe-Webb, W. Yang, and P. C. Sercel, "Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction," Appl. Phys. Lett., vol. 72, pp. 812-814, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 812-814
-
-
Lee, H.1
Lowe-Webb, R.2
Yang, W.3
Sercel, P.C.4
-
56
-
-
0000675294
-
Shape transition of InAs quantum dots by growth at high temperature
-
H. Saito, K. Nishi, and S. Sugou, "Shape transition of InAs quantum dots by growth at high temperature," Appl. Phys. Lett., vol. 74, pp. 1224-1226, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1224-1226
-
-
Saito, H.1
Nishi, K.2
Sugou, S.3
-
57
-
-
0000756466
-
A dynamical theory of diffraction for a distorted crystal
-
S. Takagi, "A dynamical theory of diffraction for a distorted crystal," J. Phys. Soc. Jpn., vol. 26, pp. 1239-1253, 1969.
-
(1969)
J. Phys. Soc. Jpn.
, vol.26
, pp. 1239-1253
-
-
Takagi, S.1
-
58
-
-
0030569880
-
High-resolution X-ray diffraction of self-organized InGaAs/GaAs quantum dot structures
-
A. Krost, F. Heinrichsdorff, D. Bimberg, A. Darhuber, and G. Bauer, "High-resolution X-ray diffraction of self-organized InGaAs/GaAs quantum dot structures," Appl. Phys. Lett., vol. 68, pp. 785-787, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 785-787
-
-
Krost, A.1
Heinrichsdorff, F.2
Bimberg, D.3
Darhuber, A.4
Bauer, G.5
-
59
-
-
0000497295
-
In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution X-ray diffraction and pole figure analysis
-
A. Krost, J. Biasing, F. Heinrichsdorff, and D. Bimberg, "In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution X-ray diffraction and pole figure analysis," Appl. Phys. Lett., vol. 75, pp. 2957-2959, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 2957-2959
-
-
Krost, A.1
Biasing, J.2
Heinrichsdorff, F.3
Bimberg, D.4
-
60
-
-
0005580628
-
Vertically aligned and electronically coupled growth induced InAs islands in GaAs
-
G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, "Vertically aligned and electronically coupled growth induced InAs islands in GaAs," Phys. Rev. Lett., vol. 76, pp. 952-955, 1996.
-
(1996)
Phys. Rev. Lett.
, vol.76
, pp. 952-955
-
-
Solomon, G.S.1
Trezza, J.A.2
Marshall, A.F.3
Harris, J.S.4
-
61
-
-
3643120476
-
Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots
-
H. Drexler, D. Leonard, W. Hansen, J. P. Kotthaus, and P. M. Petroff, "Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots," Phys. Rev. Lett., vol. 73, pp. 2252-2255, 1994.
-
(1994)
Phys. Rev. Lett.
, vol.73
, pp. 2252-2255
-
-
Drexler, H.1
Leonard, D.2
Hansen, W.3
Kotthaus, J.P.4
Petroff, P.M.5
-
62
-
-
0030218336
-
Normal incidence infrared absorption from InGaAs/GaAs quantum dot superlattice
-
D. Pan, Y. P. Zeng, M. Y. Kong, J. Wu, Y. Q. Zhu, H. Zhang, and J. M. Li, "Normal incidence infrared absorption from InGaAs/GaAs quantum dot superlattice," Electron. Lett., vol. 32, pp. 1726-1727, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1726-1727
-
-
Pan, D.1
Zeng, Y.P.2
Kong, M.Y.3
Wu, J.4
Zhu, Y.Q.5
Zhang, H.6
Li, J.M.7
-
63
-
-
0032073265
-
Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures
-
D. Pan, E. Towe, and S. Kennerly, "Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures," Electron. Lett., vol. 34, pp. 1019-1020, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 1019-1020
-
-
Pan, D.1
Towe, E.2
Kennerly, S.3
-
64
-
-
0031244727
-
Photoluminescence and far-infrared absorption in Si-doped self-organized inas quantum dots
-
J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya, "Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots," Appl. Phys. Lett., vol. 71, pp. 2079-2081, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2079-2081
-
-
Phillips, J.1
Kamath, K.2
Zhou, X.3
Chervela, N.4
Bhattacharya, P.5
-
65
-
-
0031557568
-
Mid-infrared photoconductivity in InAs quantum dots
-
K. W. Berryman, S. A. Lyon, and M. Segev, "Mid-infrared photoconductivity in InAs quantum dots," Appl. Phys. Lett., vol. 70, pp. 1861-2255, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 1861-2255
-
-
Berryman, K.W.1
Lyon, S.A.2
Segev, M.3
-
66
-
-
0032487186
-
Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
-
S. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, and P. M. Petroff, "Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors," Appl. Phys. Lett., vol. 73, pp. 2003-2005, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2003-2005
-
-
Maimon, S.1
Finkman, E.2
Bahir, G.3
Schacham, S.E.4
Garcia, J.M.5
Petroff, P.M.6
-
67
-
-
0001481003
-
Polarization dependence of intraband absorption in self-organized quantum dots
-
S. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, S. Wang, and X. G. Xie, "Polarization dependence of intraband absorption in self-organized quantum dots," Appl. Phys. Lett., vol. 73, pp. 1997-1999, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1997-1999
-
-
Xu, S.1
Chua, S.J.2
Mei, T.3
Wang, X.C.4
Zhang, X.H.5
Karunasiri, G.6
Fan, W.J.7
Wang, C.H.8
Jiang, J.9
Wang, S.10
Xie, X.G.11
-
68
-
-
0031248209
-
Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots
-
S. Sauvage, P. Boucaud, F. H. Julien, J. M. Gerard, and J. Y. Marzin, "Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots," J. Appl. Phys., vol. 82, pp. 3396-3401, 1997.
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 3396-3401
-
-
Sauvage, S.1
Boucaud, P.2
Julien, F.H.3
Gerard, J.M.4
Marzin, J.Y.5
-
69
-
-
0000701339
-
Intraband absorption in the 8-12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
-
Q. D. Zhuang, J. M. Li, H. X. Li, Y. P. Zeng, L. Pan, Y. H. Chen, M. Y. Kong, and L. Y. Lin, "Intraband absorption in the 8-12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice," Appl. Phys. Lett., vol. 73, pp. 3706-3708, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3706-3708
-
-
Zhuang, Q.D.1
Li, J.M.2
Li, H.X.3
Zeng, Y.P.4
Pan, L.5
Chen, Y.H.6
Kong, M.Y.7
Lin, L.Y.8
-
70
-
-
0001480968
-
Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on (001) InP
-
A. Weber, O. Gauthier-Lafaye, F. H. Julien, J. Brault, M. Gendry, Y. Désieres, and T. Benyattou, ́Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on (001) InP," Appl. Phys. Lett., vol. 74, pp. 413-415, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 413-415
-
-
Weber, A.1
Gauthier-Lafaye, O.2
Julien, F.H.3
Brault, J.4
Gendry, M.5
Désieres, Y.6
Benyattou, T.7
-
71
-
-
0000170145
-
Observation of inter-sub-level transitions in modulation-doped Ge quantum dots
-
J. L. Liu, W. G. Wu, A. Balandin, G. Jin, Y. H. Luo, S. G. Thomas, Y. Lu, and K. L. Wang, "Observation of inter-sub-level transitions in modulation-doped Ge quantum dots," Appl. Phys. Lett., vol. 75, pp. 1745-1747, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1745-1747
-
-
Liu, J.L.1
Wu, W.G.2
Balandin, A.3
Jin, G.4
Luo, Y.H.5
Thomas, S.G.6
Lu, Y.7
Wang, K.L.8
-
72
-
-
0347566061
-
Intraband absorption in Ge/Si self-assembled quantum dots
-
P. Boucaud, V. Le. Thanh, S. Sauvage, D. Débarre, and D. Bouchier, "Intraband absorption in Ge/Si self-assembled quantum dots," Appl. Phys. Lett., vol. 74, pp. 401-403, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 401-403
-
-
Boucaud, P.1
Thanh, V.L.2
Sauvage, S.3
Débarre, D.4
Bouchier, D.5
-
73
-
-
0000170143
-
Intersubband absorption in boron-doped multiple Ge quantum dots
-
J. L. Liu, W. G. Wu, A. Balandin, G. L. Jin, and K. L. Wang, "Intersubband absorption in boron-doped multiple Ge quantum dots," Appl. Phys. Lett., vol. 74, pp. 185-187, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 185-187
-
-
Liu, J.L.1
Wu, W.G.2
Balandin, A.3
Jin, G.L.4
Wang, K.L.5
-
74
-
-
0000677858
-
How good is the polarization selection rule for intersubband transitions?
-
H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "How good is the polarization selection rule for intersubband transitions?," Appl. Phys. Lett., vol. 72, pp. 1682-1684, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1682-1684
-
-
Liu, H.C.1
Buchanan, M.2
Wasilewski, Z.R.3
-
75
-
-
0029715099
-
Capture dynamics and infrared response in photovoltaic quantum well intersubband photodetectors
-
H. Schneider, P. Koidl, C. Schonbein, S. Ehret, E. C. Larkins, and G. Bihlmann, "Capture dynamics and infrared response in photovoltaic quantum well intersubband photodetectors," Superlattices and Microstruc., vol. 19, pp. 347-364, 1996.
-
(1996)
Superlattices and Microstruc.
, vol.19
, pp. 347-364
-
-
Schneider, H.1
Koidl, P.2
Schonbein, C.3
Ehret, S.4
Larkins, E.C.5
Bihlmann, G.6
-
76
-
-
0006159772
-
Photovoltaic qauntum well detectors
-
K. W. Goosen, S. A. Lyon, and K. Alavi, "Photovoltaic qauntum well detectors," Appl. Phys. Lett., vol. 52, pp. 1701-1703, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 1701-1703
-
-
Goosen, K.W.1
Lyon, S.A.2
Alavi, K.3
-
77
-
-
21544476181
-
Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice
-
A. Kastalsky, T. Duffield, S. J. Allen, and J. Harbison, "Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice," Appl. Phys. Lett., vol. 52, pp. 1320-1322, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 1320-1322
-
-
Kastalsky, A.1
Duffield, T.2
Allen, S.J.3
Harbison, J.4
-
78
-
-
0030084986
-
A 10μm AlGaAs/GaAs intersubband photodetector operating at zero bias voltage
-
C. Schonbein, H. Schneider, G. Bihlmann, K. Schwarz, and P. Koidl, "A 10μm AlGaAs/GaAs intersubband photodetector operating at zero bias voltage," Appl. Phys. Lett., vol. 68, pp. 973-975, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 973-975
-
-
Schonbein, C.1
Schneider, H.2
Bihlmann, G.3
Schwarz, K.4
Koidl, P.5
-
79
-
-
0004846132
-
Photovoltaic quantum well infrared photodetectors: Four zone scheme
-
H. Schneider, C. Schonbein, M. Walther, K. Schwarz, and P. Koidl, "Photovoltaic quantum well infrared photodetectors: Four zone scheme," Appl. Phys. Lett., vol. 71, pp. 246-268, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 246-268
-
-
Schneider, H.1
Schonbein, C.2
Walther, M.3
Schwarz, K.4
Koidl, P.5
-
80
-
-
0342477993
-
Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectors
-
W. A. Beck, "Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectors," Appl. Phys. Lett., vol. 63, pp. 3589-3591, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 3589-3591
-
-
Beck, W.A.1
-
81
-
-
33751145890
-
Intrinsic mechanism for the poor luminescence properties of quantum-box systems
-
H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, "Intrinsic mechanism for the poor luminescence properties of quantum-box systems," Phys. Rev., vol. B 44, pp. 10945-10948, 1991.
-
(1991)
Phys. Rev.
, vol.44 B
, pp. 10945-10948
-
-
Benisty, H.1
Sotomayor-Torres, C.M.2
Weisbuch, C.3
-
82
-
-
0000874092
-
Effect of phonon bottleneck on quantum-dot laser performance
-
M. Sugawara, K. Mukai, and H. Shoji, "Effect of phonon bottleneck on quantum-dot laser performance," Appl. Phys. Lett., vol. 71, pp. 2791-2793, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2791-2793
-
-
Sugawara, M.1
Mukai, K.2
Shoji, H.3
-
83
-
-
0032516993
-
Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain
-
V. Uskov, Y. Boucher, and J. Le Bihan, "Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain," Appl. Phys. Lett., vol. 73, pp. 1499-1501, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1499-1501
-
-
Uskov, V.1
Boucher, Y.2
Bihan, J.L.3
-
84
-
-
0001937527
-
Auger carrier capture kinetics in self-assembled quantum dot structures
-
V. Uskov, J. McInerney, F. Adler, H. Schweizer, and M. H. Pilkuhn, "Auger carrier capture kinetics in self-assembled quantum dot structures," Appl. Phys. Lett., vol. 72, pp. 58-60, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 58-60
-
-
Uskov, V.1
McInerney, J.2
Adler, F.3
Schweizer, H.4
Pilkuhn, M.H.5
-
85
-
-
0344992029
-
Efficient carrier relaxation mechanism in InGaAs/GaAs self-formed quantum dots based on the existence of continuum states
-
Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakwa, "Efficient carrier relaxation mechanism in InGaAs/GaAs self-formed quantum dots based on the existence of continuum states," Phys. Rev. Lett., vol. 82, pp. 4114-4117, 1999.
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 4114-4117
-
-
Toda, Y.1
Moriwaki, O.2
Nishioka, M.3
Arakwa, Y.4
-
86
-
-
0032607939
-
Phononassisted capture and intradot Auger relaxation in quantum dots
-
R. Ferreira and G. Bastard, "Phononassisted capture and intradot Auger relaxation in quantum dots," Appl. Phys. Lett., vol. 74, pp. 2818-2820, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2818-2820
-
-
Ferreira, R.1
Bastard, G.2
-
87
-
-
21944440380
-
Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission
-
H. Saito, K. Nishi, and S. Sugou, "Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission," Appl. Phys. Lett., vol. 73, pp. 2742-2744, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2742-2744
-
-
Saito, H.1
Nishi, K.2
Sugou, S.3
-
88
-
-
0001542266
-
0.8As grown on GaAs substrates
-
0.8As grown on GaAs substrates," Appl. Phys. Lett., vol. 74, pp. 1111-1113, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1111-1113
-
-
Nishi, K.1
Saito, H.2
Sugou, S.3
Lee, J.-S.4
-
89
-
-
0032615296
-
Optical properties of InAs quantum dots in a Si matrix
-
R. Heitz, N. N. Ledentsov, D. Bimberg, A. Y. Egorov, M. V. Maximov, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, I. P. Soshnikov, N. D. Zakharov, P. Werner, and U. Gösele, "Optical properties of InAs quantum dots in a Si matrix," Appl. Phys. Lett., vol. 74, pp. 1701-1703, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1701-1703
-
-
Heitz, R.1
Ledentsov, N.N.2
Bimberg, D.3
Egorov, A.Y.4
Maximov, M.V.5
Ustinov, V.M.6
Zhukov, A.E.7
Alferov, Zh.I.8
Soshnikov, I.P.9
Zakharov, N.D.10
Werner, P.11
Gösele, U.12
-
90
-
-
0032620409
-
InAs/InGaAs quantum dot structures on gaas substrates emitting at 1.3 μm
-
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Y. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, "InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm," Appl. Phys. Lett., vol. 74, pp. 2815-2817, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2815-2817
-
-
Ustinov, V.M.1
Maleev, N.A.2
Zhukov, A.E.3
Kovsh, A.R.4
Egorov, A.Y.5
Lunev, A.V.6
Volovik, B.V.7
Krestnikov, I.L.8
Musikhin, Yu.G.9
Bert, N.A.10
Kop'ev, P.S.11
Alferov, Zh.I.12
Ledentsov, N.N.13
Bimberg, D.14
-
91
-
-
0000024520
-
Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition
-
J. Bloch, J. Shah, W. S. Hobson, J. Lopata, and S. N. G. Chu, "Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition,μ Appl. Phys. Lett., vol. 75, pp. 2199-2201, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 2199-2201
-
-
Bloch, J.1
Shah, J.2
Hobson, W.S.3
Lopata, J.4
Chu, S.N.G.5
-
92
-
-
0000002323
-
Tunning of conduction inter-sublevel absorption wavelengths in (In,Ga)As/GaAs quantum dot nanostructures
-
D. Pan, E. Towe, S. Kennerly, and M. Y. Kong, "Tunning of conduction inter-sublevel absorption wavelengths in (In,Ga)As/GaAs quantum dot nanostructures," Appl. Phys. Lett., vol. 76, pp. 3537-3539, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 3537-3539
-
-
Pan, D.1
Towe, E.2
Kennerly, S.3
Kong, M.Y.4
-
93
-
-
0001454216
-
Independent manipulation of density and size of stress-driven self-assembled quantum dots
-
I. Mukhametzhanov, R. Heitz, J. Zeng, P. Chen, and A. Madhukar, "Independent manipulation of density and size of stress-driven self-assembled quantum dots," Appl. Phys. Lett., vol. 73, pp. 1841-1843, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1841-1843
-
-
Mukhametzhanov, I.1
Heitz, R.2
Zeng, J.3
Chen, P.4
Madhukar, A.5
-
94
-
-
0001411538
-
Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy
-
T. Ishikawa, S. Kohmoto, and K. Asakawa, "Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy," Appl. Phys. Lett., vol. 73, pp. 1712-1714, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1712-1714
-
-
Ishikawa, T.1
Kohmoto, S.2
Asakawa, K.3
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