Observation of inter-sub-level transitions in modulation-doped Ge quantum dots

Applied Physics Letters

Volumn 75, Issue 12, 1999, Pages 1745-1747

  Liu, J L ^a   Wu, W G ^a   Balandin, A ^a   Jin, G ^a   Luo, Y H ^a   Thomas, S G ^a   Lu, Y ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000170145     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124806     Document Type: Article

References (14)

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14. This number is estimated based on unstrained Ge dots and underlying Si. The presence of strain and the separation of donors and carriers change the band gaps of Si and Ge, and thus, the corresponding band offset.