High-resolution x-ray diffraction of self-organized InGaAs/GaAs quantum dot structures

Applied Physics Letters

Volumn 68, Issue 6, 1996, Pages 785-787

  Krost, A ^a   Heinrichsdorff, F ^a   Bimberg, D ^a   Darhuber, A ^b   Bauer, G ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; COMPUTER SIMULATION; CRYSTAL STRUCTURE; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

GRAZING INCIDENCE X RAY REFLECTION SPECTROSCOPY; INDIUM GALLIUM ARSENIDE; LAYER THICKNESS; STRANSKI-KRASTANOW GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030569880     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116532     Document Type: Article

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