Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates

Applied Physics Letters

Volumn 73, Issue 10, 1998, Pages 1415-1417

  Polimeni, A ^a   Henini, M ^a   Patane A ^a   Eaves, L ^a   Main, P C ^a   Hill, G ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TUNNELING; LASERS; LUMINESCENCE OF ORGANIC SOLIDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

EDGE EMITTING LASERS; OPTICAL EXCITATION; SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032493974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121961     Document Type: Article

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