Intraband absorption in the 8-12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Applied Physics Letters

Volumn 73, Issue 25, 1998, Pages 3706-3708

  Zhuang, Q D ^a   Li, J M ^a   Li, H X ^a   Zeng, Y P ^a   Pan, L ^a   Chen, Y H ^a   Kong, M Y ^a   Lin, L Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000701339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122870     Document Type: Article

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