Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1726-1727

  Pan, D ^a   Zeng, Y P ^a   Kong, M Y ^a   Wu, J ^b   Zhu, Y Q ^a   Zhang, C H ^a   Li, J M ^a   Wang, C Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Infrared defectors; Semiconductor quantum dots; Semiconductor superlattices

Indexed keywords

EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROMETERS; LIGHT ABSORPTION; LIGHT POLARIZATION; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

NORMAL INCIDENT INFRARED ABSORPTION; PHOTOLUMINESCENCE SPECTRUM; QUANTUM DOT SUPERLATTICE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030218336     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961135     Document Type: Article

References (10)

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