Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1428-1430

  Lee, S W ^a   Hirakawa, K ^a,b   Shimada, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOSENSITIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ARSENIDE; QUANTUM DOT INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 0032620077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124715     Document Type: Article

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