Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures

Electronics Letters

Volumn 34, Issue 10, 1998, Pages 1019-1020

  Pan, D ^a   Towe, E ^a   Kennerly, S ^b  

^a UNIVERSITY OF VIRGINIA   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; LIGHT ABSORPTION; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

PHOTOCURRENT SPECTRA;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032073265     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980589     Document Type: Article

References (6)

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2. PAN, D., ZENG, Y.P., KONG, M.Y., WU, J., ZHU, Y.Q., ZHANG, H., and LI, J.M.: 'Normal incident absorption from InGaAs/GaAs quantum dot superlattice', Electron. Lett., 1996, 32, pp. 1726-1727
3. PHILLIPS, J., KAMATH, K., ZHOU, X., CHERVELA, N., BHATTACHARYA, P., and : 'Photoluminescence and far-infrared absorption in Si-doped self-organised InAs qauntum dots', Appl. Phys. Lett., 1997, 71, pp. 2079-2081
4. LEVINE, B.F.: 'Quantum well infrared photodetector', J. Appl. Phys., 1993, 74, pp. R1-81
5. BENSITY, H., SOTOMAYOR, C.M., and WEIBUCH, C.: 'Intrinsic mechanism for the poor luminescence properties of quantum box systems', Phys. Rev. B, 1991, 44, pp. 10945-10948
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