Efficient carrier relaxation mechanism in In gaas/gaas self-assembled quantum dots based on the existence of continuum states

Physical Review Letters

Volumn 82, Issue 20, 1999, Pages 4114-4117

  Toda, Y ^a   Moriwaki, O ^a   Nishioka, M ^a   Arakawa, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; GROUND STATE; PHONONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PHOTOLUMINESCENCE EXCITATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0344992029     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.4114     Document Type: Article

References (20)

1. J. Y. Marzin, J. M. Gerard, A. Izral, D. Barrier, and G. Bastard, Phys. Rev. Lett., 73, 716, (1994).
2. R. Heitz, et al., Phys. Rev. B, 56, 10 435, (1997).
3. R. Heitz, Appl. Phys. Lett., 68, 361, (1996).
4. K. H. Schmidt, et al., Phys. Rev. B, 54, 11 346, (1996).
5. M. J. Steer, et al., Phys. Rev. B, 54, 17 738, (1996).
6. S. Fafard, et al., Phys. Rev. B, 52, 5752, (1995).
7. M. Grundmann, et al., Phys. Rev. B, 52, 11 969, (1995).
8. J. Y. Marzin and G. Bastard, Solid State Commun., 92, 437, (1994).
9. H. Benisty, et al., Phys. Rev. B, 44, R10 945, (1991).
10. U. Bockelmann, Phys. Rev. B, 48, 17 637, (1993).
11. E. Dekel, et al., Phys. Rev. Lett., 80, 4991, (1998).
12. L. Landin, et al., Science, 280, 262, (1998).
13. D. Gammon, et al., Science, 277, 85, (1997).
14. Y. Toda, et al., Phys. Rev. B, 58, R10 147, (1998).
15. Y. Toda, et al., Appl. Phys. Lett., 73, 517, (1998).
16. J. Oshinowo, et al., Jpn. J. Appl. Phys., 33, L1634, (1994).
17. R. Leon, et al., Phys. Rev. B, 58, R4262, (1998).
18. R. Heits et al., Phys. Rev. B.
19. S. Sauvage et al., observed broad absorption in infrared absorption measurements.
20. S. Sauvage, et al., J. Appl. Phys., 84, 4356, (1998).