메뉴 건너뛰기




Volumn 72, Issue 2, 1998, Pages 220-222

Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000630074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120691     Document Type: Article
Times cited : (103)

References (19)
  • 13
    • 0027644391 scopus 로고
    • See, for example
    • See, for example, A. Madhukar, Thin Solid Films 231, 8 (1993), and references therein;
    • (1993) Thin Solid Films , vol.231 , pp. 8
    • Madhukar, A.1
  • 18
    • 21544468818 scopus 로고    scopus 로고
    • Islands can be assembled even on such wide mesas for the same InAs delivery if, via control of growth conditions, a sufficient amount of In can be made to migrate to the mesa top as the amount is ultimately limited by the interfacet migration length and the width of the sidewalls
    • Islands can be assembled even on such wide mesas for the same InAs delivery if, via control of growth conditions, a sufficient amount of In can be made to migrate to the mesa top as the amount is ultimately limited by the interfacet migration length and the width of the sidewalls.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.