Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

Applied Physics Letters

Volumn 73, Issue 14, 1998, Pages 2003-2005

  Maimon, S ^a   Finkman, E ^a   Bahir, G ^a   Schacham, S E ^b   Garcia, J M ^c   Petroff, P M ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b ARIEL UNIVERSITY   (Israel)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; FUNCTIONS; INTEGRAL EQUATIONS; LIGHT POLARIZATION; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

INDIUM ARSENIDE; INTERSUBLEVEL TRANSITION; TEMPERATURE DEPENDENCE; WAVE FUNCTION;

INFRARED DETECTORS;

EID: 0032487186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122349     Document Type: Article

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