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Volumn 37, Issue 10 SUPPL. B, 1998, Pages
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Investigation of the leakage current in GaN P-N junctions
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Author keywords
Flame detector; GaN; Leackage current; p n junction; Tunneling effect
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON TUNNELING;
LEAKAGE CURRENTS;
METALLORGANIC VAPOR PHASE EPITAXY;
OHMIC CONTACTS;
REACTIVE ION ETCHING;
SAPPHIRE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE TESTING;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
GALLIUM NITRIDE;
REVERSE DARK CURRENTS;
SEMICONDUCTOR JUNCTIONS;
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EID: 0032182327
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.l1202 Document Type: Article |
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Times cited : (31)
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References (14)
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