High frequency AlGaN/GaN MODFET's

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Eastman, L ^a   Chu, K ^a   Schaff, W ^a   Murphy, M ^a   Weimann, N G ^a   Eustis, T ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON SCATTERING; FERMI LEVEL; GALLIUM NITRIDE; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY OF SOLIDS;

DISLOCATION DENSITY; ELECTRON TRANSIT VELOCITY; LOAD RESISTANCE; POWER COMBINING CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 0346254620     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001435     Document Type: Article

References (4)

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2. YF Wu, S Keller, P Kozodoy, B P Keller, P Parikh, D Kapolnek, S P Denbaars, IEEE Electron Dev. Lett. 18, 290-2 (1997).
3. Jan Kolnik, Ismail H. Oguzman, Kevin F. Brennan, Rongping Wang, P. Paul Ruden, Yang Wang, J. Appl. Phys. 78, 1033-1038 (1995).
4. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, L. F. Eastman, Electron. Lett. 32, 357-358 (1996).