Effects of the final oxidation step on N and O distributions in silicon oxide/nitride/oxide ultrathin films

Journal of the Electrochemical Society

Volumn 146, Issue 10, 1999, Pages 3788-3793

  Salgado, T D M ^a,b   Radtke, C ^a   Krug, C ^a   De Andrade, J ^a   Baumvol, I J R ^a  

^a Inslituto de Quîmica ^*  (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON OXIDE/NITRIDE/OXIDE FILMS;

HIGH TEMPERATURE EFFECTS; NITROGEN; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICA; SILICON WAFERS; THERMOOXIDATION; ULTRATHIN FILMS;

DIELECTRIC FILMS;

EID: 0033334631     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392551     Document Type: Article

References (22)

1. A. Spitzer and R. Baunach, Appl. Surf. Sei., 39, 192(1989).
2. R.-P. Vollertsen, L. D. Thanh, K. V. Sichart, K. H. Küsters, J. Hirschler, and M. Kamolz, J. Elect rochem. Soc., 137, 3942 ( 1990).
3. N. Matsuo and A. Sasaki, Solid-State Electron., 39, 337 (1996).
4. N. Matsuo, H. Fujiwara, T. Miyoshi, and T. Koyanagi, IEEE Electron Device. Lett., 17,56(1996).
5. S.K. Lee, J. H. Chen, Y. H. Ku, D. L. Kwong, B. Y. Nguyen. and K. W. Teng, SolidStale Electron., 3l, 1501 (1988).
6. W. Hönlein and H. Reisinger, Appl. Surf Sei., 39, 178 (1989).
7. T. Watanabe, A. Menjoh, M. Ishikawa, and J. Kumagai, in Tech. Dig. Int. Electron Devices Meet., p. 232, IEEE (1984).
8. Y. Ma, T. Yasuda, and G. Lucovsky, J. Vac. Sei. Technol. B, 11, 1533 (1993).
9. W. Ting, S. N. Lin, and D. L. Kwong, Appl. Phys. Lett., SS, 2313 (1989).
10. S.V. Hattangady, G. G. Fountain, R. G. Alley, R. A. Rudder, and R. J. Markunas, J. Vac. Sei. Technol. A, 1094 (1991).
11. C.G. Parker, G. Lucovsky, and J. R. Hauser, IEEE Electron Device Lett., EDL-19, 106(1998).
12. T. Aoyama, S. Ohkubo, H. Tashiro, Y. Tada, K. Suzuki, and K. Horiuchi, Jpn. J. Appl Phys., 37,1244 (1998).
13. Y. Wu and G. Lucovsky, IEEE Electron Device Lett., EDL-19, 367 (1998).
14. K.K. Young, C. Hu, and W. G. Oldham, IEEE Electron Device Lett., EDL-9, 616 (1988).
15. W.T. Chang, D. K. Shih, D. L. Kwong, Y. Zhou, and S. Lee, Appl. Phys. Lett.. 54, 430 (1989).
16. Y. Ma, T. Yasuda, and G. Lucovsky, J. Vac. Sei. Technol. A, 11,952 (1993).
17. Y. Zhang, G. S. Oehrlein, G. M. W. Kroesen, M. Wittmer, and K. Stein, J. Eletrochem. Soc., 140,1439 (1993).
18. H.-W. Liu, H.-P. Su, and H.-C. Cheng, Jpn. J. Appl. Phys., 34, 1713 (1995).
19. I.J. R. Baumvol, T. D. M. Salgado, C. Radtke, C. Kmg, and J. de Andrade, Appl Phys. Lett., 73, 1970(1998).
20. I.J. R. Baumvol, F. C. Stedile, J.-J. Ganem, S. Rigo, and I. Trimaille, J. Electrochem. Soc., 142, 1205 (1995). 21.1. Trimaille and S. Rigo, Appl. Surf. Sei., 39,65 (1989).
21. I. Vickridge and G. Amsel, Nucl. Inslntm. Methods B, 45, 6 (1990).
22. H. Reisinger and A. Spitzer, J. Appl. Phys., 79,3028 (1996).