Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 56-58

  Matsuo, N ^a,b   Fujiwara, H ^b   Miyoshi, T ^b   Koyanagi, T ^b  

^a IEEE

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC FIELD EFFECTS; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; NITRIDES; NUMERICAL ANALYSIS; OXIDES; SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS; THIN FILM DEVICES;

ROUGH SURFACE CAPACITORS; THIN OXIDE NITRIDE OXIDE (ONO) FILMS;

SEMICONDUCTING FILMS;

EID: 0030082821     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484122     Document Type: Article

References (7)

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