Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films

Solid State Electronics

Volumn 31, Issue 10, 1988, Pages 1501-1503

  Lee, S K ^a   Chen, J H ^a   Ku, Y H ^a   Kwong, D L ^a   Nguyen, B Y ^b   Teng, K W ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342476971     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(88)90022-6     Document Type: Article

References (9)

1. IEDM Tech. Dig.
2. Arguments for electron conduction in silicon nitride
3. 4
4. Evidence of hole flow in silicon nitride for positive gate voltage
5. New results on electron injection, hole injection, and trapping in MONOS nonvolatile memory devices