Charge Transport and Trapping Characteristics in Thin Nitride-Oxide Stacked Films

IEEE Electron Device Letters

Volumn 9, Issue 11, 1988, Pages 616-618

  Young, K K ^a   Hu, Chenming ^a   Oldham, William G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTING SILICON--APPLICATIONS; SILICA--THIN FILMS;

CHARGE TRANSPORT; CHARGE TRAPPING; ELECTRON TRAPPING; LEAKAGE CURRENTS; THIN NITRIDE-OXIDE STACKED FILMS;

SILICON NITRIDE;

EID: 0024104374     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.9294     Document Type: Article

References (10)

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