High-performance superthin oxide/nitride/oxide stacked dielectrics formed by low-pressure oxidation of ultrathin nitride

Japanese Journal of Applied Physics

Volumn 34, Issue 4R, 1995, Pages 1713-1715

  Liu, Han Wen ^a   Su, Huan Ping ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Effective oxide thickness; Low pressure oxidation; Oxide nitride oxide; Ultrathin nitride film

Indexed keywords

CHARGE DEPLETION EFFECTS; DYNAMIC RANDOM ACCESS MEMORY; SUPERTHIN FILMS; WET OXIDATION;

ATMOSPHERIC PRESSURE; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ETCHING; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; NITRIDES; OXIDATION; OXIDES; ULTRATHIN FILMS;

DIELECTRIC FILMS;

EID: 0029288438     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.1713     Document Type: Article

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