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Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3028-3034

Electrical breakdown induced by silicon nitride roughness in thin oxide-nitride-oxide films

(2) Reisinger, H a Spitzer, A a

a SIEMENS AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004541972 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.361242 Document Type: Article

Times cited : (16)

References (17)

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