Effects of Predeposition HF/NH4F Treatments on the Electrical Properties of SiO2/Si Structures Formed by Low-Temperature Plasma-Assisted Oxidation and Deposition Processes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 11, Issue 4, 1993, Pages 952-958

  Ma, Y ^a   Yasuda, T ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84957235084     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.578574     Document Type: Conference Paper

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