The physics of ONO layer dielectrics

Applied Surface Science

Volumn 39, Issue 1-4, 1989, Pages 192-199

  Spitzer, A ^a   Baunach, R ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS--THIN FILMS; ELECTRIC INSULATING MATERIALS--PHYSICAL PROPERTIES; SILICA; SILICON NITRIDE;

DYNAMIC SEMICONDUCTOR MEMORIES; MULTI-LAYER DIELECTRICS; OXIDE-NITRIDE-OXIDE (ONO) DIELECTRICS;

SEMICONDUCTING SILICON;

EID: 0024749761     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(89)90433-9     Document Type: Article

References (18)

1. 1984 IEDM Tech. Digest
2. ONO technology
3. Determination of the Fowler-Nordheim tunneling barrier from nitride to oxide in oxide:nitride dual dielectric
4. Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs
5. Study of carrier trapping in stacked dielectrics
6. A true single-transistor oxide-nitride-oxide EEPROM device