Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 337-342

  Matsuo, Naoto ^a,b   Sasaki, Akio ^a  

^a KYOTO UNIVERSITY   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTROCHEMICAL ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; NITRIDES; OXIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA;

CONDUCTION MECHANISM; FOWLER-NORDHEIM TUNNELING CONDUCTION; OXIDE NITRIDE OXIDE FILM; PLATE ELECTRODE; POLYCRYSTALLINE SILICON; POOLE-FRENKEL CONDUCTION OF HOLES;

SEMICONDUCTING FILMS;

EID: 0030103765     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00145-X     Document Type: Article

References (23)

1. T. Ema, S. Kawamoto, T. Nishi, S. Yoshida, H. Nishibe, T. Yabu, Y. Kodama, T. Nakano and M. Taguchi, IEDM Tech. Dig. 592 (1988).
2. W. Wakamiya, Y. Tanaka, H. Kimura, H. Miyatake and S. Satoh, VLSI Tech. Dig. Symp. 473 (1989).
3. S. Inoue, K. Hieda, A. Nitayama, F. Horiguchi and F. Masuoka, IEDM Tech. Dig. 31 (1989).
4. N. Matsuo, Y. Nakata, H. Ogawa, T. Yabu, S. Matsumoto, M. Sasago and S. Okada, Ext. Abst. Int. Conf. on Solid St. Devices and Materials 475 (1991).
5. T. Mine, S. Iijima, J. Yugami, K. Ohga and T. Morimoto, Ext. Abst. Int. Conf. on Solid St. Devices and Materials 137 (1989).
6. Y. Hayashide, H. Miyatake, J. Mitsuhashi, M. Hirayama, T. Higaki and H. Abe, Ext. Abst. Int. Conf. on Solid St. Devices and Materials 869 (1990).
7. H. Watanabe, N. Aoto, S. Adachi, T. Ishijima, E. Ikawa and K. Terada, Ext. Abst. Int. Conf. on Solid St. Devices and Materials 873 (1990).
8. M. Sakao, N. Kasai, T. Ishijima, E. Ikawa, H. Watanabe, K. Terada and T. Kikkawa, IEDM Tech. Dig. 655 (1990).
9. M. Yoshimaru, J. Miyano, N. Inoue, A. Sakamoto, S. You, H. Tamura and M. Ino, IEDM Tech. Dig. 659 (1990).
10. P. C. Fazan and A. Ditali, IEDM Tech. Dig. 663 (1990).
11. H. Watanabe, T. Tatsumi, S. Ohnishi, T. Harada, I. Honma and T. Kikkawa, IEDM Tech. Dig. 259 (1992).
12. P. C. Fazan, V. K. Mathews, N. Sandler, G. Q. Lo and D. L. Kwong, IEDM Tech. Dig. 263 (1992).
13. N. Matsuo, H. Ogawa, T. Kouzaki and S. Okada, Appl. Phys. Lett. 60, 2607 (1992).
14. N. Matsuo, Appl. Phys. Lett. 62, 1991 (1993).
15. M. Lenzlinger and E. H. Snow, J. appl. Phys. 40, 278 (1969).
16. G. Krieger and R. M. Swanson, J. appl. Phys. 52, 5710 (1981).
17. Z. A. Weinberg, Solid-St. Electron 20, 11 (1977).
18. C. M. Osburn and E. J. Weitzman, J. Electrochem. Soc. 119, 603 (1972).
19. K. Yamabe and K. Imai, IEEE Trans. Electron Devices 34, 1681 (1987).
20. C. Svensson and I. Lundstrom, Electron. Lett. 6, 645 (1970).
21. I. Lundstrom and C. Svensson, IEEE Trans. Electron Devices 19, 826 (1972).
22. H. Yamamoto, H. Iwasawa and A. Sasaki, IEEE Electron Device Lett. 2, 21 (1981).
23. S. Fujita, H. Toyoshima, M. Nishihara and A. Sasaki, J. Electron. Mater. 11, 795 (1982).