High-Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide Layers

Journal of the Electrochemical Society

Volumn 140, Issue 5, 1993, Pages 1439-1441

  Kroesen, G M W ^b   Oehrlein, G S ^a   Wittmer, M ^a   Stein, K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELLIPSOMETRY; ETCHING; IONS; PLASMAS;

HIGH RESOLUTION DEPTH PROFILING; IN SITU ELLIPSOMETRY; REACTIVE ION ETCHING; SILICON OXIDE/NITRIDE/OXIDE ULTRATHIN LAYERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0027592756     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221575     Document Type: Article

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