Reliability of 10 nm Stacked Insulator on Polycrystalline Silicon in Planar and Trench Capacitors

Journal of the Electrochemical Society

Volumn 137, Issue 12, 1990, Pages 3942-3947

  Vollertsen, R P ^a   Do Thanh, L ^a   Sichart, K V ^a   Kusters K H ^a   Hirschler, J ^a   Kamolz, M ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS - INSULATION; ELECTRIC INSULATING MATERIALS - RELIABILITY; FILMS - DIELECTRIC; SEMICONDUCTOR MATERIALS - DOPING;

PLANAR CAPACITORS; POLYCRYSTALLINE SILICON; STACKED INSULATORS; TRENCH CAPACITORS;

SEMICONDUCTING SILICON;

EID: 0025560882     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2086333     Document Type: Article

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