New model of tunnelling current and SILC in ultra-thin oxides

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 901-904

  Larcher, L ^a   Paccagnella, A ^a   Scarpa, A ^a   Ghidini, G ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRAPS; ELECTRON TUNNELING; LEAKAGE CURRENTS; OSCILLATIONS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

FOWLER-NORDHEIM TUNNELING; STRESS-INDUCED LEAKAGE CURRENTS (SILC); ULTRATHIN OXIDES;

MOS CAPACITORS;

EID: 0032255804     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)