A review of focused ion beam milling techniques for TEM specimen preparation

Micron

Volumn 30, Issue 3, 1999, Pages 197-204

  Giannuzzi, L A ^a   Stevie, F A ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Cirent Semiconductor   (United States)

Author keywords

Focused ion beam; Scanning electron microscopy (SEM); Secondary ion mass spectrometry (SIMS); Transmission electron microscopy (TEM)

Indexed keywords

EID: 0032970357     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0968-4328(99)00005-0     Document Type: Article

References (31)

1. Albarede P.H., Lezec H.J. Transmission electron microscopy of focused ion beam induced damage at 50 keV in Si. Calderon Benavides H.A., Yacaman M.J. Electron Microscopy 1998, ICEM14, Symposium HH. 1998;431 Institute of Physics, Bristol.
2. Anderson R., Klepeis S.J. Combined tripod polishing and FIB method for preparing semiconductor plan view specimens. Anderson R.M., Walck S.D. Materials Research Society Symposium Proceedings. 480:1997;187 Materials Research Society, Pittsburgh, PA.
3. Bender H., Vanhellemont J., Schmolke R. High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon. Japanese Journal of Applied Physics, Part 2: Letters. 36:1997;L1217-L1220.
4. Giannuzzi L.A., Drown J.L., Brown S.R., Irwin R.B., Stevie F.A. Focused ion beam milling and micromanipulation lift-out for site specific cross-section TEM specimen preparation. Anderson R.M., Walck S.D. Materials Research Society Symposium Proceedings. 480:1997;19 Materials Research Society, Pittsburgh, PA.
5. Giannuzzi L.A., Drown J.L., Brown S.R., Irwin R.B., Stevie F.A. Focused ion beam milling for site specific scanning and transmission electron microscopy of materials. Microscopy and Microanalysis. 3 (Suppl. 2):1997;347.
6. Giannuzzi, L.A., Brown, S.R., Prenitzer, B.I., Drown-MacDonald, L., Shofner, T.L., Irwin, R.B., Stevie, F.A., in press. Advances in the FIB lift-out technique for TEM specimen preparation: HREM lattice imaging, in press, Analysis of In-Service Failures and Advances in Microstructural Characterization, The 31st Annual Convention of the International Metallographical Society, July 1998 Ottawa, Canada.
7. Herlinger, L.R., Chevacharoenkul, S., Erwin, D.C., 1996. TEM sample preparation using a focused ion beam and a probe manipulator. 22nd International Symposium for Testing and Failure Analysis, ASM International, p. 199.
8. Hull, R., 1998. Direct transmission electron microscope observation of doping variations in InP-based semiconductor laser diodes. Microscopy and Microanalysis 4 (Suppl 2), Microscopy Society of America, p. 648.
9. Hull R., Stevie F.A., Bahnck D. Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes. Applied Physics Letters. 66:(3):1995;341.
10. Kamino, T., Yagucki, T., Matsumoto, H., Tomita, M., Koike, H., 1998. A new method for pin point failure analysis using FIB combined analytical TEM. Microscopy and Microanalysis, Vol. 4 (Suppl 2), Microscopy Society of America, p. 654.
11. Kimura, H., Shimuzi, K., 1997. Two-dimensional profiling of dopants in semiconductor devices using preferential etching/TEM method. Specimen Preparation for Transmission Electron Microscopy of Materials, Materials Research Society Symposium Proceedings, Vol. 480, MRS, Warrendale, PA, USA. Proceedings of the 1997 MRS Spring Symposium, San Francisco, CA, USA, MRS, pp 83-88.
12. Leslie, A.J., Pey, K.L., Sim, K.S., Beh, M.T.F., Goh, G.P., 1995. TEM sample preparation using FIB: Practical problems and artifacts, 21st International Symposium for Testing and Failure Analyis, ASM International, p. 353.
13. Longo, D.M., Howe, J.M., Johnson, W.C., 1998. The effect of focused ion beam (FIB) specimen geometry on X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) analysis in the transmission electron microscope (TEM). Microscopy Microanalysis, Vol. 4 (Suppl 2), Microscopy Society of America, p. 856.
14. Overwijk M.H.F., van den Heuvel F.C., Bulle-Lieuwma C.W.T. Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam. Journal of Vacuum Science and Technology. 11:(6):1993;202.
15. Phaneuf, M.W., Li, J., Malis, T., 1998. High resolution FIB as a general materials science tool. Microscopy and Microanalysis, Vol. 4 (Suppl 2), Microscopy Society of America, Springer, p. 492.
16. Prenitzer B.I., Giannuzzi L.A., Brown S.R., Irwin R.B., Shofner T.L., Stevie F.A. Microscopy and Microanalysis 1998 Proceedings. 1998;Microscopy Society of America. p. 858.
17. Prenitzer B.I., Giannuzzi L.A., Brown S.R., Irwin R.B., Shofner T.L., Stevie F.A. The influence of incident ion range on the efficiency of TEM and SEM specimen preparation of focused ion beam milling. Calderon Benavides H.A., Yacaman M.J. Electron Microscopy 1998, ICEM14, Symposium K. 1998;711 Institute of Physics, Bristol.
18. Prenitzer B.I., Giannuzzi L.A., Newman K., Brown S.R., Shofner T.L., Irwin R.B., Stevie F.A. Transmission electron microscope specimen preparation of Zn powders using the focused ion beam lift-out technique. Metallurgical and Materials Transactions. A. 29:(9):1998;2399.
19. Saito Masakazu, Aoyama T., Hashimoto T., Isakozawa S. Transmission electron microscope sample shape optimization for energy dispersive X-ray spectroscopy using the focused ion beam technique. Japanese Journal of Applied Physics, Part 1: Regular papers and Short Notes and Review papers. 37:(1):1998;355-359.
20. Saka, H., Nagaya, G., Sakuishi, T., Abe, S., Muroga, A., 1996. Plan-view transmission electron microscopy of crack tips in bulk materials. Symposium Q: Fracture-Instability Dynamics, Scaling, and Ductile/Brittle Behavior Materials Research Society Symposium Proceedings. Vol. 409. Materials Research Society, Pittsburgh, PA, USA. Proceedings of the 1996 MRS Fall Meeting Boston, MA, MRS, pp. 45-50.
21. Sheng, T.T., Goh, G.P., Tung, C.H., Wang, J.L.F., Cheng, J.K., 1997. FIB precision TEM sample preparation using carbon replica. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 1997 IEEE, Piscataway, NJ.
22. Stevie, F.A., Downey, S.W., Brown, S., Shofner, T., Decker, M., Dingle, T., Christman, L., 1998. Microscale elemental imaging of semiconductor materials using focused ion beam SIMS. Microscopy Microanalysis, Vol. 4 (Suppl 2), Microscopy Society of America, p. s650.
23. Stevie, F.A., Irwin, R.B., Shofner, T.L., Brown, S.R., Drown, J.L., Giannuzzi, L.A., 1998. Plan view sample preparation using the focused ion beam lift-out technique, International Conference on Characterization and Metrology of ULSI Technology Proceedings, pp. 868-872.
24. Stevie, F.A., Shane, T.C., Kahora, P.M., Hull, R., Bahnck, D., Kannan, V.C., David, E., 1995. Applications of focused ion beams in microelectronics production, design and development. Surface and Interface Analysis, Vol. 23(2). Proceedings of the Symposium on Applied Surface Analysis Burlington, MA, USA, American Vacuum Society, American Society for Testing and Materials, pp. 61-68.
25. Susnitzky, D.W., Johnson, K.D., 1998. Foused ion beam (FIB) milling damage formed during TEM sample preparation of silicon. Microscopy Microanalysis, Vol. 4(Suppl 2), Microscopy Society of America, p. 656.
26. Tarutani M., Takai Y., Shimizu R. Application of the focused-ion-beam technique for prepared the cross-sectional sample of chemical vapor deposition diamond thin film for high-resolution transmission electron microscope observation. Japanese Journal of Applied Physics, Part 2. 31:(9AP. P):1992;L1305.
27. Tarutani, M., Takai, Y., Shimizu, R., Uda, K., Takahashi, H., 1993. Development of a focused ion beam apparatus for preparing cross-sectional transmission electron microscope specimens. Technology Reports of the Osaka University, Vol. 43, no. 2142-2162. pp. 167-173.
28. Tsuji, S., Tsujimoto, K., Tsutsui, N., Miura, N., Kuroda, K., Saka, H., 1996. Investigation of thin-film transistors using a combination of focused ion beam etching and cross-sectional transmission electron microscopy observation, Thin Solid Films, Vol. 281-282(1-2), Proceedings of the 1995 13th International Vacuum Congress and the 9th International Conference on Solid Surfaces Yokohama, Japan, pp 562-567.
29. Tsujimoto K., Tsuji S., Takatsuji H., Kuroda K., Saka H., Miura N. Cross-sectional TEM sample preparation method using FIB etching for thin-film transitor. Anderson R.M., Walck S.D. Materials Research Society Symposium Proceedings. 1997;207 Materials Research society, Pittsburgh.
30. Tsujimoto, K., Tsuji, S., Saka, H., Kuroda, K., Takatsuji, H., Suzuki, Y., 1997b. In-situ TEM characterization of whiskers on Al electrodes for thin-film transistors. Thin Films - Structure and Morphology Materials Research Society Symposium Proceedings, Vol. 441, Materials Research Society, Pittsburgh, PA, USA. Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, MRS, pp. 421-426.
31. Walker, J.F., 1998. Techniques for control of stress in FIB-prepared TEM samples. In:Calderon Benavides, H.A., Yacaman, M.J. (Eds.). Electron Microscopy 1998, ICEM14, Symposium F, 3. Institute of Physics, Bristol, pp. 555.