High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

  Bender, Hugo ^a   Vanhellemont, Jan ^b   Schmolke, Rüdiger ^b  

^a IMEC   (Belgium)

^b SILTRONIC AG   (Germany)

Author keywords

Crystal orignated particles; Czochralski silicon; Focused ion beam; Grown in defects; High resolution transmission electron microscopy; Octahedral void defects

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; IMAGING TECHNIQUES; ION BEAMS; LIGHT SCATTERING; PARTICLES (PARTICULATE MATTER); TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS (FIB);

SILICON WAFERS;

EID: 0031221811     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1217     Document Type: Article

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