Investigation of thin-film transistors using a combination of focused ion beam etching and cross-sectional transmission electron microscopy observation

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 562-567

  Tsuji, S ^a   Tsujimoto, K ^b   Tsutsui, N ^b   Miura, N ^b   Kuroda, K ^c   Saka, H ^c  

^a IBM JAPAN LTD   (Japan)

^b ITES Co   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous materials; Etching; Ion bombardment; Transmission electron microscopy

Indexed keywords

AMORPHOUS SILICON; CHARACTERIZATION; ETCHING; GLASS; ION BEAMS; ION BOMBARDMENT; IRRADIATION; MORPHOLOGY; MULTILAYERS; RADIATION DAMAGE; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; FOCUSED ION BEAM ETCHING; ION IRRADIATION; ION MILLING; MICROVOIDS;

THIN FILM TRANSISTORS;

EID: 0030219511     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08718-4     Document Type: Article

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