Two-dimensional profiling of dopants in semiconductor devices using preferential etching/TEM method

Materials Research Society Symposium - Proceedings

Volumn 480, Issue , 1997, Pages 83-88

  Kimura, H ^a   Shimizu, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRON BEAMS; ETCHING; ION BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS (FIB); PREFERENTIAL ETCHING; TWO BEAM APPROXIMATION; TWO DIMENSIONAL PROFILING;

VLSI CIRCUITS;

EID: 0031335127     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-480-83     Document Type: Conference Paper

References (7)