Microscale Elemental Imaging of Semiconductor Materials Using Focused Ion Beam Sims

Microscopy and Microanalysis

Volumn 4, Issue , 1998, Pages 650-651

  Stevie, F A ^a   Downey, S W ^a   Brown, S ^a   Shofner, T ^b   Decker, M ^b   Dingle, T ^c   Christman, L ^d  

^a NOKIA RESEARCH CENTER   (United States)

^b Kirk Resources   (United States)

^c Fei europe   (United Kingdom)

^d Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22444453103     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927600023370     Document Type: Conference Paper

References (4)

1. R. Levi-Setti, et al., Secondary Ion Mass Spectrometry, SIMS V, A. Benninghoven et al., eds., Springer-Verlag, Berlin (1986)132.
2. S. W. Downey et al., Secondary Ion Mass Spectrometry, SIMS XI, G Gillen et al., eds., Wiley, Chichester (1998) in press.
3. N. J. Montgomery, et al., ibid.
4. B. W. Schueler, et al., ibid.