Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes

Microscopy and Microanalysis

Volumn 4, Issue , 1998, Pages 648-649

  Hull, R ^a  

^a Department of Materials Science ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22444452330     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927600023369     Document Type: Conference Paper

References (5)

1. See other relevant papers by D.V. Lang, M. McCartney, and D. Venables in these proceedings.
2. Samples provided by AT&T Bell Laboratories (Now: Bell Laboratories, Lucent Technologies).
3. R. Hull, D. Bahnck, FA. Stevie, L.A. Koszi and S.N.G. Chu. Appl. Phys. Lett.,62, 3408 (1993)
4. R. Hull, FA. Stevie and D. Bahnck, Appl. Phys. Lett.66, 341-3 (1995)
5. M.V. Moore, MSc Thesis, University of Virginia (1996)