Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 204-213

  Kolev, Flamen V ^a,b   Deen, M Jamal ^a,b   Kierstead, James ^a   Citterio, Mauro ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; ELECTRON TRAPS; GATES (TRANSISTOR); RADIATION DAMAGE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CONSTANT-RESISTANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY (CR-DLTS);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032715711     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737460     Document Type: Article

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