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Applied Physics Letters

Volumn 51, Issue 4, 1987, Pages 256-258

Interstitial defect reactions in silicon

(4) Asom, M T a Benton, J L a Sauer, R a Kimerling, L C a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549104126 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.98465 Document Type: Article

Times cited : (135)

References (20)

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- Interstitial nitrogen has been reported but due to its small size and high electronegativity it is regarded as anomalous with respect to other group V impurities

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- In Schottky‐barrier samples (SB), H (0.36) is not accessible because there is no means of forward bias injection of holes. In addition, injection levels high enough to saturate H (0.36) with holes are not attainable in samples doped with [formula omitted]

17
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- (unpublished)
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