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Journal of Crystal Growth

Volumn 106, Issue 1, 1990, Pages 116-126

Characterization of defects in semiconductors by deep level transient spectroscopy

(1) Benton, Janet L a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; SPECTROSCOPIC ANALYSIS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0025521563 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(90)90293-T Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.