Bulk and interface imperfections in semiconductors

Solid State Electronics

Volumn 19, Issue 12, 1976, Pages 975-990

  Sah, C T ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS;

EID: 0017268925     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(76)90176-3     Document Type: Article

References (39)

1. Recombination-Generation and Optical Properties of Gold Acceptor in Silicon
2. Thermal ionization rates and energies of electrons and holes at silver centers in silicon
3. Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V Impurities
4. Measurement of trapped-minority-carrier thermal emission rates from Au, Ag, and Co traps in silicon
5. Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processes