A method to improve the speed and sensitivity of constant-capacitance voltage transient measurements

Solid State Electronics

Volumn 30, Issue 5, 1987, Pages 513-518

  Jeng Jye Shiau, ^a   Fahrenbruch, Alan L ^a   Bube, Richard H ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - VOLTAGE;

CONSTANT-CAPACITANCE VOLTAGE TRANSIENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; HIGH DENSITY; IMPERFECTION LEVELS;

SEMICONDUCTOR MATERIALS;

EID: 0023348193     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90206-1     Document Type: Article

References (18)

1. Transient capacitance spectroscopy in heavily compensated semiconductors
2. A feedback method for investigating carrier distributions in semiconductors
3. A new method for the determination of dopant and trap concentration profiles in semiconductors