Capacitance and conductance deep level transient spectroscopy in field-effect transistors

Applied Physics Letters

Volumn 48, Issue 3, 1986, Pages 227-229

  Hawkins, I D ^a   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DLTS; TRAP CONCENTRATION;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0022579538     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.96565     Document Type: Article

References (0)