New voltage transient technique for deep-level studies in depletion-mode field-effect transistors

Journal of the Electrochemical Society

Volumn 145, Issue 9, 1998, Pages 3258-3264

  Kolev, P ^a   Deen, M H ^a   Hardy, T ^a   Murowinski, R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CHARGE COUPLED DEVICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; RADIATION EFFECTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

BACK-GATE DRIVING; DEPLETION-MODE FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0032166442     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838795     Document Type: Article

References (43)